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BU323ZG +BOM

NPN Darlington Bipolar Power Transistor

Hersteller:

ON Semiconductor, LLC
Herstellerteil #:

BU323ZG
Datenblatt:

BU323ZG Datenblatt (PDF)
Transistor Type:

NPN - Darlington
Current - Collector (Ic) (Max):

10 A
Voltage - Collector Emitter Breakdown (Max):

350 V
Vce Saturation (Max) @ Ib, Ic:

1.7V @ 250mA, 10A
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an BU323ZG

BU323ZG Allgemeine Beschreibung

The BU323ZG, a high-voltage NPN bipolar junction transistor (BJT) from STMicroelectronics, features a maximum collector-emitter voltage (VCEO) of 1000 volts and a collector current (IC) rating of up to 15 amperes. Its TO-247 package design provides efficient heat dissipation, ensuring reliable operation even in high-power applications. This robust transistor is suitable for demanding applications that require high voltage and current handling capabilities, such as power supplies, motor controls, and electronic ballasts. With its reliable performance and rugged construction, the BU323ZG is well-equipped to handle various operating conditions, making it a dependable choice for power applications

Hauptmerkmale

The fast switching capability of this transistor enables high-speed data transfer and processing.
Its high-voltage rating ensures safe operation in high-tension systems.
The BU323ZG transistor features excellent thermal stability and low power consumption.
This product is designed to operate efficiently in a wide range of environmental conditions, from -40°C to 125°C.

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	-
Transistor Type	NPN - Darlington	Current - Collector (Ic) (Max)	10 A
Voltage - Collector Emitter Breakdown (Max)	350 V	Vce Saturation (Max) @ Ib, Ic	1.7V @ 250mA, 10A
Current - Collector Cutoff (Max)	100µA	DC Current Gain (hFE) (Min) @ Ic, Vce	500 @ 5A, 4.6V
Power - Max	150 W	Frequency - Transition	2MHz
Operating Temperature	-65°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	BU323	Product Category	Darlington Transistors
Configuration	Single	Transistor Polarity	NPN
Collector- Emitter Voltage VCEO Max	350 V	Emitter- Base Voltage VEBO	6 V
Maximum DC Collector Current	10 A	Maximum Collector Cut-off Current	100 uA
Mounting Style	Through Hole	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	DC Collector/Base Gain hfe Min	150
Height	12.2 mm	Length	15.2 mm
Product Type	Darlington Transistors	Factory Pack Quantity	30
Subcategory	Transistors	Width	4.9 mm
Unit Weight	0.229281 oz

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