IGBT Transistors(520)

IGBT Transistors, Product Code: HGTP20N60C3"

00V 8A 42W N-channel

IGBT 1700 V 80 A 360 W Surface Mount TO-268AA

Efficient switching device for motor control and power conversion.

IGBT Transistors 1200V 400A SINGLE

TO3P LH rated at 1000 volts, 60 amps, and 170 watts, belonging to the Insulated Gate Bipolar Transistor category

Semiconductor component MGP15N40CL, featuring an N-type channel configuration suitable for switching applications, with a power dissipation of 150mW

Compliant with ROHS regulations

IGBT, 600V, 15A, Short Circuit Rated

Insulated Gate Bipolar Transistor, 75A Collector Current, 600V Breakdown Voltage, N-Channel, TO-264AA Package, 3 Pins

IXGK120N60B is a Trans IGBT Chip rated for N-CH operation at 600V and 200A with a power dissipation of 660mW

600V 140A 454W TO-247AC IGBTs compliant with ROHS

High-Voltage IGBTs for Plasma Display Panel Use

Insulated Gate Bipolar Transistor

IRG7PSH50UDPBF IGBTs with 1.2kV voltage rating

Insulated Gate Bipolar Transistor with a maximum current rating of 140A and a breakdown voltage of 1200V

The IRG4PSH71UDPBF by Infineon is an IGBT with a maximum current handling capacity of 99 A and a voltage rating of 1200 V

1200V IGBT Transistors Designed for UltraFast Switching Frequencies from 5 to 40kHz

600V power handling for versatile use

600V TO-247AC IGBTs, 100W 34A ROHS