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TO-247 Power MOSFET, N-Channel, Silicon Carbide (SiC) Technology, Rated for 1.2KV and 63A
TO-247-3Hersteller:
Wolfspeed, Inc.
Herstellerteil #:
C2M0025120D
Datenblatt:
Pbfree Code:
Yes
Part Life Cycle Code:
Not Recommended
Reach Compliance Code:
compliant
Case Connection:
DRAIN
EDA/CAD Modelle:
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[email protected],
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The C2M0025120D is a state-of-the-art silicon carbide power MOSFET module that stands out in the market due to its impressive specifications. With a maximum voltage rating of 1200V and a continuous current rating of 250A, this module is well-equipped to handle the demands of high power applications, such as power conversion and motor drive. Its low on-resistance and high switching speed contribute to its exceptional efficiency and reduced switching losses, making it an ideal choice for a wide range of applications
Pbfree Code | Yes | Part Life Cycle Code | Not Recommended |
Reach Compliance Code | compliant | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 1200 V |
Drain Current-Max (ID) | 90 A | Drain-source On Resistance-Max | 0.034 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-247 |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 250 A | Surface Mount | NO |
Terminal Finish | MATTE TIN | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON CARBIDE |
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Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $41,780 | $41,78 |
30+ | $40,039 | $1.201,17 |
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