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C2M1000170J-TR +BOM

MOSFET featuring 1700V rating and 1 Ohm RDS ON using silicon carbide technology

C2M1000170J-TR Allgemeine Beschreibung

Meet the C2M1000170J-TR silicon carbide power MOSFET, a cutting-edge creation by Wolfspeed, a Cree Company, designed to revolutionize high-efficiency power conversion applications. Whether it's motor drives, UPS systems, or renewable energy inverters, this MOSFET is the pinnacle of excellence. With a voltage rating of 1700V and a continuous current rating of 100A, it is perfectly poised to meet the demands of high-power applications. Its low on-resistance of 0.070 ohms is a game-changer in minimizing power losses and enhancing the overall system efficiency. Encased in a TO-247-4 package, it delivers exceptional thermal performance and facilitates easy mounting onto a heatsink for efficient heat dissipation. Not to mention, the C2M1000170J-TR showcases a fast switching speed and high avalanche ruggedness, cementing its reputation for unwavering reliability and robustness in various operating conditions

Spezifikationen

Series C2M™ FET Type N-Channel
Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 20V Vgs(th) (Max) @ Id 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 20 V Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 1000 V Power Dissipation (Max) 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number C2M1000170

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