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TO-247 package containing N-channel silicon carbide transistor with 1.7KV voltage rating and 72A current rating
TO-247-4Hersteller:
Wolfspeed, Inc.
Herstellerteil #:
C2M0045170P
Datenblatt:
Series:
C2M™
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain To Source Voltage (Vdss):
1700 V
EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to
[email protected],
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Engineered for high power density applications, the C2M0045170P module is designed to meet the demands of space-constrained environments where weight and size are critical factors. Its high-speed switching capability allows for the use of smaller and lighter passive components, ultimately leading to reduced costs and improved system performance. Additionally, the module's wide operating temperature range and high reliability make it an ideal solution for harsh environments and rigorous applications, ensuring consistent and dependable performance in challenging conditions
Series | C2M™ | FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) | Drain to Source Voltage (Vdss) | 1700 V |
Current - Continuous Drain (Id) @ 25°C | 72A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 59mOhm @ 50A, 20V | Vgs(th) (Max) @ Id | 4V @ 18mA |
Gate Charge (Qg) (Max) @ Vgs | 188 nC @ 20 V | Vgs (Max) | +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 3672 pF @ 1000 V | Power Dissipation (Max) | 520W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Base Product Number | C2M0045170 |
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