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SiC MOSFET designed for high voltage applications, with a low on-resistance of 1 Ohm
TO-263-7Hersteller:
Wolfspeed
Herstellerteil #:
C2M1000170J
Datenblatt:
Technology:
SiC
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to
[email protected],
or fill below form to Quote for C2M1000170J, guaranteed quotes back within
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Cree's C2M1000170J module is designed to meet the needs of industries such as automotive, renewable energy, and industrial power systems. Its third-generation silicon carbide MOSFET technology sets it apart from traditional power devices, offering superior performance and enhanced reliability. With optimized high-speed switching capabilities, this module enhances power density and operational efficiency in a wide range of applications
Product Category | MOSFET | Technology | SiC |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 1.7 kV |
Id - Continuous Drain Current | 5.3 A | Rds On - Drain-Source Resistance | 1 Ohms |
Vgs - Gate-Source Voltage | - 10 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 3.1 V |
Qg - Gate Charge | 13 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 78 W |
Channel Mode | Enhancement | Configuration | Single |
Fall Time | 40.4 ns | Height | 4.435 mm |
Length | 10.18 mm | Moisture Sensitive | Yes |
Product Type | MOSFET | Rise Time | 4.8 ns |
Factory Pack Quantity | 50 | Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 10.8 ns | Typical Turn-On Delay Time | 4 ns |
Width | 9.075 mm | Unit Weight | 0.056438 oz |
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