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C2M1000170J +BOM

SiC MOSFET designed for high voltage applications, with a low on-resistance of 1 Ohm

C2M1000170J Allgemeine Beschreibung

Cree's C2M1000170J module is designed to meet the needs of industries such as automotive, renewable energy, and industrial power systems. Its third-generation silicon carbide MOSFET technology sets it apart from traditional power devices, offering superior performance and enhanced reliability. With optimized high-speed switching capabilities, this module enhances power density and operational efficiency in a wide range of applications

Hauptmerkmale

  • High efficiency and low power loss
  • Fast switching speed and high reliability
  • Suitable for high voltage and current applications
  • RoHS compliant and lead-free soldering friendly
  • Wide temperature range and high performance
  • Precise control and stable operation guaranteed

Anwendung

  • Accurate test readings
  • Durable industrial machines

Spezifikationen

Product Category MOSFET Technology SiC
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 1.7 kV
Id - Continuous Drain Current 5.3 A Rds On - Drain-Source Resistance 1 Ohms
Vgs - Gate-Source Voltage - 10 V, + 25 V Vgs th - Gate-Source Threshold Voltage 3.1 V
Qg - Gate Charge 13 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 78 W
Channel Mode Enhancement Configuration Single
Fall Time 40.4 ns Height 4.435 mm
Length 10.18 mm Moisture Sensitive Yes
Product Type MOSFET Rise Time 4.8 ns
Factory Pack Quantity 50 Subcategory MOSFETs
Typical Turn-Off Delay Time 10.8 ns Typical Turn-On Delay Time 4 ns
Width 9.075 mm Unit Weight 0.056438 oz

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