Bezahlverfahren
C2M0080120D +BOM
Power Mosfet, N Channel, 31.6 A, 1.2 Kv, 0.08 Ohm, 20 V, 3.2 V Rohs Compliant: Yes
TO-247-3-
Hersteller:
Wolfspeed, Inc.
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Herstellerteil #:
C2M0080120D
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Datenblatt:
-
Pbfree Code:
Yes
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Part Life Cycle Code:
Not Recommended
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Reach Compliance Code:
compliant
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Case Connection:
DRAIN
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EDA/CAD Modelle:
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Verfügbarkeit: 4168 Stck
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C2M0080120D Allgemeine Beschreibung
The C2M0080120D MOSFET is a reliable and efficient semiconductor component with a high drain source voltage of 1200V and a continuous drain current of 31.6A. Its low on-resistance of 0.08ohm ensures minimal power loss and high efficiency. With a threshold voltage of 3.2V and a power dissipation of 208W, this N-channel transistor is designed for high performance in challenging environments. The TO-247 case style with 3 pins allows for easy and secure mounting, while its wide operating temperature range of -55°C to 150°C ensures versatility in various applications
Hauptmerkmale
- High Blocking Voltage with Low On-Resistance
- High Speed Switching with Low Capacitances
- Easy to Parallel and Simple to Drive
- Avalanche Ruggedness
- Resistant to Latch-Up
- Halogen Free, RoHS Compliant
- Benefts
- Higher System Effciency
- Reduced Cooling Requirements
- Increased Power Density
- Increased System Switching Frequency
Anwendung
SWITCHINGSpezifikationen
Pbfree Code | Yes | Part Life Cycle Code | Not Recommended |
Reach Compliance Code | compliant | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 1200 V |
Drain Current-Max (ID) | 36 A | Drain-source On Resistance-Max | 0.098 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-247 |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 80 A | Surface Mount | NO |
Terminal Finish | MATTE TIN | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON CARBIDE |
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In Stock: 4.168
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $14,807 | $14,81 |
10+ | $14,204 | $142,04 |
30+ | $13,157 | $394,71 |
90+ | $12,245 | $1.102,05 |
Die unten angegebenen Preise dienen nur als Referenz.
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