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NDP6060 +BOM

N-Channel Enhancement Mode Field Effect Transistor 60V, 48A, 25mΩ

Hersteller:

ON Semiconductor, LLC
Herstellerteil #:

NDP6060
Datenblatt:

NDP6060 Datenblatt (PDF)
Case Outline:

340AT
MSL Temp (°C):

0
Container Type:

TUBE
Technology:

Si
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an NDP6060

NDP6060 Allgemeine Beschreibung

Designed with ON Semiconductor's high cell density DMOS technology, the NDP6060 N-Channel power field effect transistors are tailored to deliver exceptional performance in low voltage applications. With minimized on-state resistance, superior switching capabilities, and resilience to high energy pulses in avalanche and commutation modes, these transistors are well-suited for use in automotive, DC/DC converters, PWM motor controls, and other battery-powered circuits requiring fast switching, low power loss, and resistance to transients. This makes the NDP6060 a reliable choice for applications where high performance and durability are essential

Hauptmerkmale

48A, 60V. R_DS(ON) = 0.025Ω@ V_GS=10V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R_DS(ON).
TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

Anwendung

This product is general usage and suitable for many different applications.

Spezifikationen

Status	Active	Case Outline	340AT
MSL Temp (°C)	0	Container Type	TUBE
Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	48 A	Rds On - Drain-Source Resistance	25 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	70 nC	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	100 W
Channel Mode	Enhancement	Series	NDP6060
Configuration	Single	Fall Time	77 ns
Height	16.3 mm	Length	10.67 mm
Product Type	MOSFET	Rise Time	145 ns
Factory Pack Quantity	50	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	28 ns	Typical Turn-On Delay Time	10 ns
Width	4.7 mm	Part # Aliases	NDP6060_NL
Unit Weight	0.068784 oz

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..