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NDT456P +BOM

P-Channel Enhancement Mode Field Effect Transistor

NDT456P Allgemeine Beschreibung

Specifically tailored for low voltage scenarios, the NDT456P Power SOT transistor is a valuable component for designers seeking to maximize energy efficiency. By minimizing on-state resistance and enhancing switching performance, ON Semiconductor has created a product that meets the demands of today's power-sensitive applications. From extending battery life in consumer electronics to controlling motors in automotive systems, the NDT456P offers a reliable solution for a wide range of power management needs

Hauptmerkmale

  • +36V, 2A
  • RDSON = 0.040 Ω @ VGS = +18 V
  • Low ripple current and noise performance
  • Compact and reliable design for industrial applications
  • High temperature operation capability

Anwendung

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Spezifikationen

Source Content uid NDT456P Pbfree Code Yes
Part Life Cycle Code Active Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 63 Weeks
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (ID) 7.5 A
Drain-source On Resistance-Max 0.03 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 4 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 3 W
Pulsed Drain Current-Max (IDM) 20 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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