Bezahlverfahren
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
P-Channel Enhancement Mode Field Effect Transistor -30V, -5A, 65mΩ
SOT-223Hersteller:
Fairchild Semiconductor
Herstellerteil #:
NDT452AP
Datenblatt:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Reach Compliance Code:
not_compliant
ECCN Code:
EAR99
EDA/CAD Modelle:
Senden Sie alle Stücklisten an
[email protected],
oder füllen Sie das untenstehende Formular aus, um ein Angebot für NDT452AP zu erhalten. Garantierte Antwort innerhalb
12hr.
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
The ON Semiconductor NDT452AP is a Power SOT P-Channel enhancement mode power field effect transistor that utilizes the latest DMOS technology to deliver superior performance in low voltage applications. With its high cell density design, this transistor minimizes on-state resistance and ensures excellent switching capabilities, making it ideal for use in notebook computer power management and DC motor control. Whether you're designing a system that requires efficient power management or looking to enhance the performance of your DC motor control applications, the NDT452AP offers the reliability and precision you need
Source Content uid | NDT452AP | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 55 Weeks |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 5 A |
Drain-source On Resistance-Max | 0.065 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G4 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 4 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -65 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 3 W | Pulsed Drain Current-Max (IDM) | 15 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
After-Sales- und Abwicklungsbezogen
Bezahlverfahren
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | - | - |
Die unten angegebenen Preise dienen nur als Referenz.
2N2222
Stmicroelectronics
1000+ $0,587
BC547
Onsemi
NPN Epitaxial Silicon Transistor
ULN2003
Onsemi
Versatile device for driving heavy loads and motor
IRF3205
Infineon
TO-220AB Tube Power Transistor with N-Channel Silicon
TAN15
Microchip
The TAN is a robust NPN transistor designed for high-frequency applications, capable of operating at up to V and continuous curren