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NDS9948 +BOM

60V 2.3A 250mΩ@2.3A,10V 900mW 3V@250uA 2 P-Channel SO-8 MOSFETs ROHS

NDS9948 Allgemeine Beschreibung

The NDS9948 P-Channel MOSFET represents a fusion of technological innovation and practical functionality, making it an ideal choice for power management applications. With its rugged gate design and PowerTrench process optimization, this component delivers reliable performance in challenging environments. Engineers can leverage the wide range of gate drive voltage ratings provided by the NDS9948 MOSFET to design efficient and adaptable systems that meet specific power management requirements. By incorporating this versatile and robust component into their projects, designers can achieve optimal performance and longevity in their applications

Hauptmerkmale

  • High-speed switching, low gate current
  • Low power consumption, high reliability
  • Ultra-low RDS-ON, fast rise/fall times
  • Compact design, high power handling
  • Low noise, high linearity, ultra-low distortion
  • High voltage, low gate leakage, high current density

Anwendung

  • High Performance
  • Efficient Design
  • Reliable Functionality

Spezifikationen

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 2.3 A Rds On - Drain-Source Resistance 138 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 13 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 2 W
Channel Mode Enhancement Tradename PowerTrench
Series NDS9948 Configuration Dual
Fall Time 3 ns Forward Transconductance - Min 5 S
Height 1.75 mm Length 4.9 mm
Product Type MOSFET Rise Time 9 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 2 P-Channel Type MOSFET
Typical Turn-Off Delay Time 16 ns Typical Turn-On Delay Time 6 ns
Width 3.9 mm Part # Aliases NDS9948_NL
Unit Weight 0.006596 oz

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