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Siehe Technische Spezifikationen

NDS331N +BOM

Product NDS331N: SOT-23 MOSFETs compliant with ROHS regulations

Hersteller:

Onsemi
Herstellerteil #:

NDS331N
Datenblatt:

NDS331N Datenblatt (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an NDS331N

NDS331N Allgemeine Beschreibung

The NDS331N is an N-Channel logic level enhancement mode power field effect transistor, manufactured using cutting-edge DMOS technology by ON Semiconductor. With a focus on minimizing on-state resistance, these transistors are ideal for a variety of low voltage applications such as notebook computers, portable phones, PCMCIA cards, and battery-powered circuits. The compact surface mount package of the NDS331N ensures a small outline footprint, making it a versatile choice for projects where space is at a premium

Hauptmerkmale

High-speed switching performance
Low power consumption
R_DS(ON) = 0.15 Ω @ V_GS= 5 V
Ultra-compact surface mount package
R_DS(ON) = 0.12 Ω @ V_GS= 3.9 V
Robust electrostatic discharge (ESD) protection
Low leakage current and high surge capability
R_DS(ON) = 0.18 Ω @ V_GS= 4.5 V
Silicone-based encapsulation for moisture resistance

Anwendung

Great for all kinds of projects.
Works well in many settings.
Versatile and user-friendly.

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	1.3 A	Rds On - Drain-Source Resistance	210 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	500 mV
Qg - Gate Charge	5 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	500 mW
Channel Mode	Enhancement	Series	NDS331N
Configuration	Single	Fall Time	25 ns
Height	1.12 mm	Length	2.9 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	25 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	10 ns
Typical Turn-On Delay Time	5 ns	Width	1.4 mm
Part # Aliases	NDS331N_NL	Unit Weight	0.001129 oz

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