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Siehe Technische Spezifikationen

NDP6060L +BOM

N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 48A, 25mΩ

Hersteller:

ON Semiconductor, LLC
Herstellerteil #:

NDP6060L
Datenblatt:

NDP6060L Datenblatt (PDF)
Case Outline:

340AT
MSL Temp (°C):

0
Container Type:

TUBE
Technology:

Si
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an NDP6060L

NDP6060L Allgemeine Beschreibung

The NDP6060L power field effect transistor from ON Semiconductor is manufactured using a high cell density DMOS technology, which allows for minimal on-state resistance and superior switching performance. This makes the NDP6060L well-suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery-powered circuits. Additionally, its ability to withstand high energy pulses in avalanche and commutation modes makes it a reliable choice for applications requiring resistance to transients

Hauptmerkmale

48A, 60V. R_DS(ON) = 0.025Ω @ V_GS = 5V.
Low drive requirements allowing operation directly from logic drivers. V_GS(TH) < 2.0V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R_DS(ON).
TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

Anwendung

This product is general usage and suitable for many different applications.

Spezifikationen

Status	Active	Case Outline	340AT
MSL Temp (°C)	0	Container Type	TUBE
Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	48 A	Rds On - Drain-Source Resistance	25 mOhms
Vgs - Gate-Source Voltage	- 16 V, + 16 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	60 nC	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	100 W
Channel Mode	Enhancement	Series	NDP6060L
Configuration	Single	Fall Time	161 ns
Height	16.3 mm	Length	10.67 mm
Product Type	MOSFET	Rise Time	320 ns
Factory Pack Quantity	50	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	49 ns	Typical Turn-On Delay Time	15 ns
Width	4.7 mm	Part # Aliases	NDP6060L_NL
Unit Weight	0.068784 oz

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Bewertungen und Rezensionen

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Z**y 01.11.2022

Quick delivery, all as described. Thank you

C**n 03.28.2021

Product is as described and works well.

L**s 01.24.2021

Many thanks to the seller. The parcel came whole. For a month on ukrposta. I ordered one and the seller put two-gave another one. Thank you. I advise the seller.

S**l 02.24.2020

Went long. Didn't check.